AG Rohlfing
StudIP · Webmail · RZ ·
AG Rohlfing
Home Publikationen Lehre / Teaching Forschung / Research Arbeitsgruppe / Group Kontakt / Contact

Elektronische Struktur kondensierter Materie

Electronic Structure of Condensed Matter

Prof. Rohlfing has moved


>Universität Münster, Institut für Festkörpertheorie

(Wilhelm-Klemm-Str. 10, 48149 Münster, Room 708; E-Mail:; phone: +49 251 83-36340)

Willkommen bei der Arbeitsgruppe von Prof. Dr. Michael Rohlfing. Unser Hauptgebiet ist die elektronische Struktur von Systemen kondensierter Materie (Festkörper, Oberflächen, Moleküle, ...), mit besonderem Augenmerk auf angeregten elektronischen Zuständen und auf rechner-gestützten ab-initio Methoden (Dichtefunktionaltheorie und Vielteilchen-Störungstheorie), um zu einer parameterfreien Bestimmung spektraler und dynamischer Eigenschaften zu gelangen.

Welcome to the research group of Prof. Dr. Michael Rohlfing. Our main area is the electronic structure of condensed-matter systems (solids, surfaces, molecules, ...), with a particular focus on excited-state properties and on computational ab-initio approaches (density-functional theory and many-body perturbation theory), aiming at a parameter-free determination of spectral and dynamical properties.

Absorption spectrum (imaginary macroscopic dielectric function) of GaAs, illustrating the key role of many-body correlation effects (here: electron-hole interaction) in electronic and optical excitations.

Dangling-bond surface state at the Si(111)-(2x1) surface (side view). Such surface states are of predominant importance for the chemical, electronic, and spectral properties of semiconductor surfaces. Surface states have spatial extent of about 1 nm and are easily accessible by theory and experiment. Therefore they constitute prototype systems for the study of nanoscale physics.

Change of the electronic charge density due to adsorption of a PTCDA molecule on Ag(111) (blue = reduction, red = enhancement of electrons). Charge accumulates below the molecule, accompanied by polarization of the Ag surface layer and by charge re-distribution at the oxygen atoms at the ends of the molecule.